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          EV、HEV用IGBT模塊

          采用直接水冷銅散熱片基礎結構、實現了高功率密度和小型封裝的EV、HEV用IGBT模塊 產品中分別內置有6個IGBT和FWD。此外,還內置有用于檢測溫度的熱敏電阻。

          產品信息

          • 產品信息

          EV、HEV用IGBT模塊 650V級

          ※點擊產品圖像即可查看等效電路圖。

          VCE(sat): at Tj=25°C, Chip

          Package Device type VCES
          Volt
          IC(Cont)
          Amps.
          IC(Peak)
          Amps.
          VCE(sat)
          Typ. Volts
          VF
          Typ. Volts
          Net mass Grams

          M651
          6MBI400VW-065V 650 200 400 2.00 (IC=400A) 1.70 (IF=400A) 660g

          M652
          6MBI600VW-065V 650 300 600 2.00 (IC=600A) 1.70 (IF=600A) 900g

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          :開發中

           


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